Light-emitting display device and method of manufacturing the same

ABSTRACT

A light-emitting display device and method of manufacturing the same are provided. A light-emitting display device includes: a first substrate, an insulating layer on the first substrate, the insulating layer including depressions and protrusions, a plurality of light-emitting diodes on the protrusions, the light-emitting diodes including: a pixel electrode layer, an emission layer, and a common electrode layer, and a black matrix layer in the depressions.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of and priority to Korean PatentApplication No. 10-2017-0178332, filed on Dec. 22, 2017, the entirety ofwhich is hereby incorporated by reference.

BACKGROUND 1. Technical Field

The present disclosure relates to a light-emitting display device and amethod of manufacturing the same.

2. Discussion of the Related Art

With the development of information technology, the market for displaydevices that serve as media between users and information is growing.Accordingly, display devices, such as an organic light-emitting diode(OLED) display, a liquid crystal display (LCD), and a plasma displaypanel (PDP), are increasingly used.

Among the aforementioned display devices, the OLED display deviceincludes a display panel including a plurality of subpixels, a driverfor driving the display panel, and a power supply for supplying power tothe display panel. The driver includes a scan driver for supplying scansignals (or gate signals) to the display panel and a data driver forsupplying data signals to the display panel.

OLED display devices display images in such a manner that light-emittingdiodes of selected subpixels emit light when scan signals and datasignals are supplied to subpixels arranged in a matrix. OLED displaydevices can be classified into a bottom emission type that emits lighttoward a lower substrate, and a top emission type that emits lighttoward an upper substrate.

OLED display devices have various advantages because they display imagesbased on light generated from LEDs included in subpixels, and thus arespotlighted as future display devices. However, to realize ultra-highdefinition OLED display devices, more research needs to be conducted.

SUMMARY

Accordingly, the present disclosure is directed to a light-emittingdisplay device and a method of manufacturing the same that substantiallyobviate one or more of the issues due to limitations and disadvantagesof the related art.

Additional features and aspects will be set forth in the descriptionthat follows, and in part will be apparent from the description, or maybe learned by practice of the inventive concepts provided herein. Otherfeatures and aspects of the inventive concepts may be realized andattained by the structure particularly pointed out in the writtendescription, or derivable therefrom, and the claims hereof as well asthe appended drawings.

To achieve these and other aspects of the inventive concepts as embodiedand broadly described, there is provided a light-emitting displaydevice, including: a first substrate, an insulating layer on the firstsubstrate, the insulating layer including depressions and protrusions, aplurality of light-emitting diodes on the protrusions, thelight-emitting diodes including: a pixel electrode layer, an emissionlayer, and a common electrode layer, and a black matrix layer in thedepressions.

In another aspect, there is provided a method of manufacturing alight-emitting display device, the method including: providing a firstsubstrate, providing an insulating layer on the first substrate, theinsulating layer including depressions and protrusions, providing aplurality of light-emitting diodes on the protrusions, the providing thelight-emitting diodes including: providing a pixel electrode layer,providing an emission layer, and providing a common electrode layer, andproviding a black matrix layer in the depressions.

Other systems, methods, features and advantages will be, or will become,apparent to one with skill in the art upon examination of the followingfigures and detailed description. It is intended that all suchadditional systems, methods, features and advantages be included withinthis description, be within the scope of the present disclosure, and beprotected by the following claims. Nothing in this section should betaken as a limitation on those claims. Further aspects and advantagesare discussed below in conjunction with embodiments of the disclosure.It is to be understood that both the foregoing general description andthe following detailed description of the present disclosure areexamples and explanatory, and are intended to provide furtherexplanation of the disclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, that may be included to provide a furtherunderstanding of the disclosure and are incorporated in and constitute apart of this specification, illustrate embodiments of the disclosure andtogether with the description serve to explain various principles of thedisclosure.

FIG. 1 is a block diagram of an organic light-emitting display device.

FIG. 2 is a circuit diagram of a subpixel.

FIGS. 3A and 3B are circuit diagrams showing part of FIG. 2 in detail.

FIGS. 4A and 4B illustrates a cross section of a display panel.

FIG. 5 is a cross-sectional view for describing a structure ofsubpixels.

FIG. 6 is a diagram for describing emission characteristics ofsubpixels.

FIG. 7 is a first cross-sectional view of a display panel according to afirst embodiment of the present disclosure.

FIG. 8 is a second cross-sectional view of the display panel accordingto the first embodiment of the present disclosure.

FIGS. 9 to 12 are cross-sectional views for describing a method ofmanufacturing the display panel according to the first embodiment of thepresent disclosure.

FIG. 13 is a third cross-sectional view of the display panel accordingto the first embodiment of the present disclosure.

FIG. 14 is a fourth cross-sectional view of the display panel accordingto the first embodiment of the present disclosure.

FIG. 15 is a fifth cross-sectional view of the display panel accordingto the first embodiment of the present disclosure.

FIG. 16 is a first cross-sectional view of a display panel according toa second embodiment of the present disclosure.

FIG. 17 is a second cross-sectional view of the display panel accordingto the second embodiment of the present disclosure.

FIGS. 18 to 21 are cross-sectional views for describing a method ofmanufacturing the display panel according to the second embodiment ofthe present disclosure.

FIG. 22 is a third cross-sectional view of the display panel accordingto the second embodiment of the present disclosure.

FIG. 23 is a fourth cross-sectional view of the display panel accordingto the second embodiment of the present disclosure.

FIG. 24 is a fifth cross-sectional view of the display panel accordingto the second embodiment of the present disclosure.

FIG. 25 is a sixth cross-sectional view of the display panel accordingto the second embodiment of the present disclosure.

Throughout the drawings and the detailed description, unless otherwisedescribed, the same drawing reference numerals should be understood torefer to the same elements, features, and structures. The relative sizeand depiction of these elements may be exaggerated for clarity,illustration, and convenience.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments of the presentdisclosure, examples of which may be illustrated in the accompanyingdrawings. In the following description, when a detailed description ofwell-known functions or configurations related to this document isdetermined to unnecessarily cloud a gist of the inventive concept, thedetailed description thereof will be omitted. The progression ofprocessing steps and/or operations described is an example; however, thesequence of steps and/or operations is not limited to that set forthherein and may be changed as is known in the art, with the exception ofsteps and/or operations necessarily occurring in a particular order.Like reference numerals designate like elements throughout. Names of therespective elements used in the following explanations are selected onlyfor convenience of writing the specification and may be thus differentfrom those used in actual products.

Advantages and features of the present disclosure, and implementationmethods thereof will be clarified through following example embodimentsdescribed with reference to the accompanying drawings. The presentdisclosure may, however, be embodied in different forms and should notbe construed as limited to the example embodiments set forth herein.Rather, these example embodiments are provided so that this disclosuremay be sufficiently thorough and complete to assist those skilled in theart to fully understand the scope of the present disclosure. Further,the present disclosure is only defined by scopes of claims.

A shape, a size, a ratio, an angle, and a number disclosed in thedrawings for describing embodiments of the present disclosure are merelyan example. Thus, the present disclosure is not limited to theillustrated details. Like reference numerals refer to like elementsthroughout. In the following description, when the detailed descriptionof the relevant known function or configuration is determined tounnecessarily obscure an important point of the present disclosure, thedetailed description of such known function or configuration may beomitted. In a case where terms “comprise,” “have,” and “include”described in the present specification are used, another part may beadded unless a more limiting term, such as “only,” is used. The terms ofa singular form may include plural forms unless referred to thecontrary.

In construing an element, the element is construed as including an erroror tolerance range even where no explicit description of such an erroror tolerance range. In describing a position relationship, when aposition relation between two parts is described as, for example, “on,”“over,” “under,” or “next,” one or more other parts may be disposedbetween the two parts unless a more limiting term, such as “just” or“direct(ly),” is used.

In describing a time relationship, when the temporal order is describedas, for example, “after,” “subsequent,” “next,” or “before,” a casewhich is not continuous may be included unless a more limiting term,such as “just,” “immediate(ly),” or “direct(ly),” is used.

It will be understood that, although the terms “first,” “second,” etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present disclosure.

In describing elements of the present disclosure, the terms like“first,” “second,” “A,” “B,” “(a),” and “(b)” may be used. These termsare merely for differentiating one element from another element, and theessence, sequence, order, or number of a corresponding element shouldnot be limited by the terms. Also, when an element or layer is describedas being “connected,” “coupled,” or “adhered” to another element orlayer, the element or layer can not only be directly connected oradhered to that other element or layer, but also be indirectly connectedor adhered to the other element or layer with one or more interveningelements or layers “disposed” between the elements or layers, unlessotherwise specified.

The term “at least one” should be understood as including any and allcombinations of one or more of the associated listed items. For example,the meaning of “at least one of a first item, a second item, and a thirditem” denotes the combination of all items proposed from two or more ofthe first item, the second item, and the third item as well as the firstitem, the second item, or the third item.

In the description of embodiments, when a structure is described asbeing positioned “on or above” or “under or below” another structure,this description should be construed as including a case in which thestructures contact each other as well as a case in which a thirdstructure is disposed therebetween. The size and thickness of eachelement shown in the drawings are given merely for the convenience ofdescription, and embodiments of the present disclosure are not limitedthereto.

Features of various embodiments of the present disclosure may bepartially or overall coupled to or combined with each other, and may bevariously inter-operated with each other and driven technically as thoseskilled in the art can sufficiently understand. Embodiments of thepresent disclosure may be carried out independently from each other, ormay be carried out together in co-dependent relationship.

Hereinafter, example embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.

A display device described below is applicable to any spontaneousemission type display device based on spontaneous emission type elementscapable of emitting light. For example, the display device describedbelow is applicable to inorganic light-emitting display devices realizedbased on an inorganic LED, as well as organic light-emitting displaydevices realized based on an OLED. However, an organic light-emittingdisplay device is used as an example device in the followingdescription.

FIG. 1 is a block diagram of an organic light-emitting display device.FIG. 2 is a circuit diagram of a subpixel. FIGS. 3A and 3B are circuitdiagrams showing part of FIG. 2 in detail.

With reference to the example of FIG. 1, the organic light-emittingdisplay device may include a timing controller 151, a data driver 155, ascan driver 157, a display panel 110, and a power supply 153. The timingcontroller 151 may receive driving signals, including a data enablesignal, a vertical synchronization signal, a horizontal synchronizationsignal, and a clock signal, along with a data signal DATA from an imageprocessor (not shown). The timing controller 151 may output a gatetiming control signal GDC for controlling operation timing of the scandriver 157 and a data timing control signal DDC for controllingoperation timing of the data driver 155 based on the driving signals.The timing controller 151 may be configured in the form of an integratedcircuit (IC).

The data driver 155 may sample and latch the data signal DATA suppliedfrom the timing controller 151 in response to the data timing controlsignal DDC supplied from the timing controller 151 to convert thedigital data signal into an analog data signal (or data voltage) using agamma reference voltage and may output the analog data signal. The datadriver 155 may output the data signal DATA through data lines DL1 toDLn. The data driver 155 may be configured in the form of an IC.

The scan driver 157 may output a scan signal in response to the gatetiming control signal GDC supplied from the timing controller 151. Thescan driver 157 may output the scan signal through scan lines GL1 toGLm. The scan driver 157 may be configured in the form of an IC oraccording to gate in panel (a method of forming a transistor through athin film forming process) in the display panel 110.

The power supply 153 may output a high voltage and a low voltage. Thehigh voltage and the low voltage output from the power supply 153 may besupplied to the display panel 110. The high voltage may be supplied tothe display panel 110 through a first power line EVDD and the lowvoltage may be supplied to the display panel through a second power lineEVSS. The power supply 153 may be configured in the form of an IC.

The display panel 110 may display an image based on the data signal DATAsupplied from the data driver 155, the scan signal supplied from thescan driver 157, and power supplied from the power supply 153. Thedisplay panel 110 may include subpixels SP, which may operate to displayimages and emit light.

The display panel 110 may be divided into a bottom-emission type thatmay emit light downward from a transistor array, a top-emission typethat may emit light upward from the transistor array, and adual-emission type that may emit light upward and downward.

The subpixels SP may include red, green, and blue subpixels or white,red, green, and blue pixels, although embodiments are not limitedthereto. The subpixels SP may have one or more emission areas accordingto emission characteristics.

With reference to the example of FIG. 2, a single subpixel may include aprogramming unit SC for setting a gate-source voltage of a drivingtransistor DR and an organic LED (OLED), which may be positioned at anintersection of a data line DL1 and a scan line GL1. The OLED mayinclude an anode ANO, a cathode CAT, and an organic emission layerbetween the anode ANO and the cathode CAT. The anode ANO may beconnected to the driving transistor DR.

The programming unit SC may be realized by a transistor array includingat least one switching transistor and at least one capacitor. Thetransistor array may be realized, for example, based on a CMOSsemiconductor, a PMOS transistor, or an NMOS transistor. Transistorsincluded in the transistor array may be p-type or n-type transistors.Further, semiconductor layers of the transistors included in thetransistor array of the subpixel may include amorphous silicon,polysilicon, and/or oxide.

The switching transistor may be turned on in response to a scan signalfrom the scan line GL1 to apply a data voltage from the data line DL1 toone electrode of the capacitor. The driving transistor DL may adjust theemission quantity of the OLED by controlling the quantity of currentaccording to the voltage charged in the capacitor. The emission quantityof the OLED may be proportional to the quantity of current supplied fromthe driving transistor DR. Further, the subpixel may be connected to thefirst power line EVDD and the second power line EVSS, and may beprovided with the high voltage and the low voltage therethrough.

With reference to the example of FIG. 3A, the subpixel may include acompensation circuit CC, in addition to the aforementioned switchingtransistor SW, the driving transistor DR, the capacitor, and the OLED.The compensation circuit CC may include one or more transistorsconnected to a compensation signal line INIT. The compensation circuitCC may set a gate-to-source voltage of the driving transistor DR to avoltage in which the threshold voltage of the driving transistor DR hasbeen reflected to reduce or prevent luminance variation due to thethreshold voltage of the driving transistor DR when the OLED emitslight. For example, the scan line GL1 may include at least two scanlines GL1 a and GL1 b for controlling the switching transistor SW andtransistors of the compensation circuit CC.

With reference to the example of FIG. 3B, the subpixel may include aswitching transistor SW1, a driving transistor DR, a sensing transistorSW2, a capacitor Cst, and an OLED. The sensing transistor SW2 may beincluded in the compensation circuit CC, and may perform a sensingoperation for compensation operation of the subpixel.

The switching transistor SW1 may provide a data voltage supplied throughthe data line DL1 to a first node N1 in response to a scan signalsupplied through the first scan line GL1 a. In addition, the sensingtransistor SW2 may initialize or sense a second node N2 between thedriving transistor DR and the OLED in response to a sensing signalsupplied through the second sensing line GL1 b.

The subpixel circuit configurations illustrated in FIGS. 3A and 3B aremerely for aiding in understanding the present disclosure. That is, thesubpixel circuit of embodiments of the present disclosure is not limitedthereto, and may be configured in various configurations, such as 2T1C(2-transistor, 1-capacitor), 3T1C, 4T2C, 6T2C, and 7T2C.

FIGS. 4A and 4B illustrates a cross section of a display panel. FIG. 5is a cross-sectional view for describing a structure of subpixels. FIG.6 is a diagram for describing emission characteristics of subpixels.

With reference to the examples of FIGS. 4A and 4B, the display panel 110may include a first substrate 110 a, a second substrate 110 b, a displayarea AA, a pad part PAD, and a protection film layer ENC. The firstsubstrate 110 a and the second substrate 110 b may include a transparentresin or glass through which light can pass, although embodiments arenot limited thereto. The display area AA may include subpixels foremitting light. The pad part PAD may include pads for electricalconnection with an external substrate.

The display area AA may occupy almost the entire surface of the firstsubstrate 110 a, and the pad part PAD may be outside one side of thefirst substrate 110 a. The display area AA may be protected frommoisture or oxygen by being encapsulated by the protection film layerENC between the first substrate 110 a and the second substrate 110 b.Alternatively, the pad part PAD may be exposed to the outside. However,embodiments of the display panel 110 are not limited to theaforementioned structure, and may be realized in various structures.

With reference to the example of FIG. 5, the subpixels may include anOLED and a color filter layer CF. The OLED may be formed on one side ofthe substrate 110 a, and may include an anode E1 (which may be acathode), an emission layer EL for emitting light, such as white light,and a cathode E2 (which may be an anode). Light emitted from the OLEDmay be changed to a different color by the color filter layer CF.Accordingly, light emitted from the OLED may not necessarily be whitelight. However, an example in which the OLED may emit white light isdescribed below.

The color filter layer CF may change white light emitted from theemission layer EL into red (R), green (G), and blue (B) light, and mayproject white light W without change. A region in which red light may beemitted through the color filter layer CF may be defined as a “redsubpixel,” a region in which green light may be emitted through thecolor filter layer CF may be defined as a “green subpixel,” a region inwhich blue light may be emitted through the color filter layer CF may bedefined as a “blue subpixel,” and a region in which white light may beemitted through the color filter layer CF may be defined as a “whitesubpixel.”

The color filter layer CF may be on the side of the second substrate 110b that faces the OLED or on the OLED. The protection film layer ENC maybe between the cathode E2 and the color filter layer CF. However, theprotection film layer ENC may be omitted according to a desiredencapsulation structure.

The anode E1 may include a multilayer structure, including a firstelectrode layer EA, a second electrode layer EB, and a third electrodelayer EC, e.g., to improve characteristics of emission to the secondsubstrate 110 b. The first electrode layer EA may include a transparentoxide material (e.g., indium tin oxide (ITO)), the second electrodelayer EB may include a metal material (e.g., silver (Ag)) havingreflectivity, and the third electrode layer EC may include a transparentoxide material (e.g., ITO). However, the anode E1 is not limited to thisstructure.

With reference to the example of FIG. 6, the emission layer EL mayinclude a first emission layer EL1, a charge generation layer CGL, and asecond emission layer EL2. The emission layer EL, including the chargegeneration layer CGL, may further may include two or more emissionlayers, in addition to the two emission layers EL1 and EL2. Accordingly,the emission layer EL, including the charge generation layer CGL, may beregarded as an emission layer including at least two emission layers.

The emission layer EL may emit white light based on light emitted fromthe first emission layer EL1 and the second emission layer EL2. Forexample, the first emission layer EL1 may include a material capable ofemitting blue light B, and the second emission layer EL2 may include amaterial capable of emitting yellowish-green (YG) (or yellow) light.

The charge generation layer CGL may include a PN junction of an N-typecharge generation layer n-CGL and a P-type charge generation layerp-CGL, or may include an NP junction of a P-type charge generation layerp-CGL and an N-type charge generation layer n-CGL. The charge generationlayer CGL may generate charges, or may separate holes from electrons andinject charges to the first emission layer (first stack) EL1 and thesecond emission layer (second stack) EL2. The N-type charge generationlayer n-CGL may provide electrons to the first emission layer EL1, andthe P-type charge generation layer p-CGL may provide holes to the secondemission layer EL2, e.g., to reduce a driving voltage while improvingemission efficiency of the element including multiple emission layers.

First Embodiment

FIG. 7 is a first cross-sectional view of a display panel according to afirst embodiment of the present disclosure. FIG. 8 is a secondcross-sectional view of the display panel according to the firstembodiment of the present disclosure.

With reference to the examples of FIGS. 7 and 8, the display panelaccording to the first embodiment may include a first substrate 110 a, atransistor array TFTA, OLEDs, a black matrix layer LBM, and a protectionfilm layer ENC. The display panel may include a plurality of subpixels,such as first to third subpixels SP1 to SP3. The first to thirdsubpixels SP1 to SP3 may be defined based on the transistor array TFTAand the OLEDs, and will be described below.

The transistor TFTA may be on the first substrate 110 a. The transistorarray TFTA may include switching transistors, driving transistors,capacitors, and power lines that may be arranged corresponding to thefirst to third subpixels SP1 to SP3.

The transistor array TFTA may have various configurations, as describedabove with reference to the examples of FIGS. 3A and 3B, and may havevarious lamination structures according to the position of a gateelectrode, such as top-gate and bottom-gate structures, and thus is notdescribed in detail. Components included in the transistor array TFTA,such as switching transistors, driving transistors, and capacitors, maybe protected by an insulating layer or a protection layer.

An insulating layer 118 may be on the transistor array TFTA. Theinsulating layer 118 may be on the protection layer, which may be thehighest layer of the transistor array TFTA. The insulating layer 118 mayinclude a material capable of planarizing the surface while formingdepressions HM and protrusions PM protruding from depressions HM.Although the depressions HM and the protrusions PM are illustrated inthe examples of FIGS. 7 and 8 as having a rectangular shape, embodimentsare not limited thereto. The depressions HM and the protrusions PM maybe only in the display area on the first substrate 110 a, or may beextended to part of a non-display area.

The protrusions PM may respectively define the regions of the first tothird subpixels SP1 to SP3. The protrusions PM of the insulating layer118 may provide regions in which OLEDs may be formed, and may define thepositions of emission regions or openings in which light may be emitted.The depressions HM of the insulating layer 118 may provide regions inwhich the black matrix layer LBM may be formed, and may definenon-emission areas NA in which light may be not emitted.

Each OLED may include a pixel electrode layer 121, an emission layer122, and a common electrode layer 123 positioned in a protrusion PM ofthe insulating layer 118. The pixel electrode layer 121 may be selectedas an anode (or a cathode), and the common electrode layer 123 may beselected as a cathode (or an anode). The pixel electrode layer 121 maybe connected to the source electrode or the drain electrode of a drivingtransistor included in the transistor array TFTA. The pixel electrodelayer 121 may be isolated to correspond to the protrusion PM. The pixelelectrode layer 121 may be formed in a monolayer structure or amultilayer structure including a reflective electrode layer.

A bank layer 120 may be on the pixel electrode layer 121. The bank layer120 may be over the protrusions PM and the depressions HM. The banklayer 120 on the protrusions PM may have openings that selectivelyexpose the pixel electrode layers 121. The openings of the bank layer120 may be openings or emission regions of the subpixels. The bank layer120 on the depressions HM may cover the surface of the insulating layer118 in the depressions HM, without having openings. The bank layer 120may cover the edge of the pixel electrode layer 121 and the sidewalls ofthe protrusions PM. The thickness of the bank layer 120 on the sidewallsof the protrusions PM may decrease with decreasing distance to thebottom of the protrusions PM, e.g., taper. When the bank layer 120 onthe sidewalls of the protrusions PM has this form, the sidewalls of theprotrusions PM have a reverse-tapered shape.

The emission layer 122 may be on the exposure pixel electrode layer 121and the depressions HM. The emission layer 122 may include one emissionlayer or at least two emission layers. The emission layer 122 may emitred, green, blue, or white light. However, embodiments are not limitedthereto. The emission layer 122 on the pixel electrode layer 121 may beelectrically isolated from the emission layer 122 on the depressions HM.

The emission layer 122 on the pixel electrode layer 121 may be isolatedfrom the emission layer 122 on the depressions HM according to thestructure and height of the protrusions PM and the depressions HM of theinsulating layer 118. Further, the emission layer 122 on the pixelelectrode layer 121 may be isolated from the emission layer 122 on thedepressions HM according to the reverse-tapered structure of the banklayer 120. That is, the emission layer 122 on the pixel electrode layer121 may be isolated from the emission layer 122 on the depressions HMaccording to one or both of the depressions and the protrusions of theinsulating layer 118 and the reverse-tapered structure of the bank layer120. As a result, the emission layer 122 on the pixel electrode layer121 can emit light, whereas the emission layer 122 on the depressions HMcannot emit light. In addition, the emission layer 122 on the pixelelectrode layer 121 may be isolated from the emission layer 122 on thedepressions HM by controlling the height or tapered structure of thebank layer 120.

An example in which the bank layer 120 is present has been described.However, the bank layer 120 may be omitted, as shown in the example ofFIG. 8. When the bank layer 120 is omitted, the pixel electrode layer121 of each OLED may be respectively formed to correspond to the area ofeach protrusion PM. For example, the emission region of a subpixel maybe widened as compared to a case in which the bank layer 120 is present.When the bank layer 120 is omitted, the insulating layer 118 may serveas the bank layer 120. As such, the protrusions PM of the insulatinglayer 118 may be formed in a reverse-tapered shape. That is, the lowerparts of the protrusions PM may have a narrow width, whereas the upperparts thereof may have a wide width (e.g., the depression may beopposite to the protrusion). According to this structure, the emissionlayer 122 on the pixel electrode layer 121 may be isolated from theemission layer 122 on the depressions HM by the reverse-taperedprotrusions PM.

The common electrode layer 123 may cover the emission layer 122 and thedepressions HM. The common electrode layer 123 may cover the emissionlayers 122 of all subpixels formed on the first substrate 110 a. Thecommon electrode layer 123 may be formed in a monolayer structure or amultilayer structure including a low-resistance layer. The commonelectrode layer 123 may be formed along the topography of theprotrusions PM and the depressions HM, and thus may be formed on theemission layer 122, the sidewalls of the protrusions PM, and the surfaceof the depressions HM, without being cut. Although it may be desirablethat the common electrode layer 123 be formed in the display areawithout being cut to reduce the resistance of the display panel, thecommon electrode layer 123 may include a cut region, e.g., due to thestructure of the depressions HM.

As described above, when the OLEDs are formed on the protrusions PM ofthe insulating layer 118, the emission layer 122 may be isolated persubpixel. Thus, current leakage generated between neighboring subpixelsmay be reduced or prevented.

The protection film layer ENC may be on the common electrode layer 123.Although the protection film layer ENC may be formed in either amonolayer or multilayer structure according to an embodiment, an examplein which the protection film layer ENC is formed in a multilayerstructure is described below for convenience of explanation. Theprotection film layer ENC may include first to third protection filmlayers 127, 128, and 129. The first protection film layer 127 may coverthe overall surface of the common electrode layer 123. The firstprotection film layer 127 may be formed along the surface of the commonelectrode layer 123, and thus may have a topography corresponding to thedepressions HM and the protrusions PM of the insulating layer 118. Thesecond protection film layer 128 may cover the overall surface of thefirst protection film layer 127. The second protection film layer 128may be thicker than the first and third protection film layers 127 and129. The third protection film layer 129 may cover the overall surfaceof the second protection film layer 128. The first to third protectionfilm layers 127 to 129 may have a structure in which an inorganicmaterial and an organic material may be alternately laminated. Forexample, one or more of: indium (In), silicon (Si), zinc (Zn), tungsten(W), molybdenum (Mo), and/or aluminum (Al) may be selected as theinorganic material. A monomer or a polymer may be selected as theorganic material. However, embodiments are not limited to theseexamples.

The black matrix layer LBM may be in the depressions HM of theinsulating layer 118. The black matrix layer LBM may include a materialcapable of blocking or absorbing light, such as a black matrix. Theblack matrix layer LBM may be on the first protection film layer 127 ofthe protection film layer ENC, for example, because the first protectionfilm layer 127 may primarily serve to protect the OLEDs positionedthereunder from moisture, oxygen, and the like. That is, the blackmatrix layer LBM may be formed on the first protection film layer 127 inthe depressions HM in consideration of the external air infiltrationprevention capability of the first protection film layer 127. However,if the black matrix layer LBM is not conductive, or is capable ofabsorbing moisture and oxygen, the black matrix layer LBM may be formedon the common electrode layer 123.

In addition, the black matrix layer LBM may reduce or prevent awaveguide phenomenon in which light moves to neighboring subpixels dueto a refractive index difference between internal layers when theprotection film layer ENC is used, and may reduce or prevent colormixing due to the waveguide phenomenon when the black matrix layer LBMis positioned between layers of the protection film layers ENC and has aheight similar to that of the protrusions PM or the common electrodelayer 123, and thus may block a light path that may cause the waveguidephenomenon, or may absorb light.

FIGS. 9 to 12 are cross-sectional views for describing a method ofmanufacturing the display panel according to the first embodiment of thepresent disclosure.

The method of manufacturing the display panel will be briefly describedbased on the structure illustrated in the example of FIG. 7. Withreference to the examples of FIGS. 9 and 10, subpixel regions, in whichthe first to third subpixels SP1 to SP3 may be formed, and non-emissionareas NA may be defined on the first substrate 110 a. The transistorarray TFTA may be formed on the first substrate 110 a. The insulatinglayer 118 may be formed on the transistor array TFTA. The insulatinglayer 118 may be formed of an organic material, such as a negativeovercoat, polyimide, a benzocyclobutene series resin, acrylate, orphotoacrylate, but embodiments are not limited thereto.

A sacrificial layer 130 may be formed on the insulating layer 118. Thesacrificial layer 130 may be formed to correspond to the subpixelregions of the first to third subpixels SP1 to SP3. The sacrificiallayer 130 may cover the subpixels regions, and may expose thenon-emission areas NA. The insulating layer 118 may be etched using thesacrificial layer 130. Although dry etching may be used as an etchingmethod, embodiments are not limited thereto. When the insulating layer118 is etched using the sacrificial layer 130, protrusions PM anddepressions HM may be formed in the insulating layer 118.

With reference to the examples of FIGS. 11 and 12, the pixel electrodelayer 121 may be formed on the protrusions PM of the insulating layer118. The bank layer 120 may be formed to cover the pixel electrode layer121, the sidewalls of the protrusions PM and the surface of thedepressions HM. The sidewalls of the protrusions PM may have areverse-tapered shape according to the bank layer 120. Accordingly, theupper parts of the depressions HM may be relatively narrow, and thelower parts thereof may be relatively wide. The bank layer 120 may beetched to selectively expose the pixel electrode layer 121. The emissionlayer 122 may be formed on the pixel electrode layer 121 and thedepressions HM. The common electrode layer 123 may be formed to coverthe emission layer 122 and the depressions HM.

The first protection film layer 127 may be formed to cover the commonelectrode layer 123. The black matrix layer LBM may be formed on thefirst protection film layer 127 positioned in the depressions HM. Thesecond protection film layer 128 may be formed on the first protectionfilm layer 127 and the black matrix layer LBM. The third protection filmlayer 129 may be formed on the second protection film layer 128.

Hereinafter, other examples based on the first embodiment of the presentdisclosure will be described. The following description is based ondifferences from the examples of FIGS. 7 and 8, and duplicatedescription is not repeated.

FIG. 13 is a third cross-sectional view of the display panel accordingto the first embodiment of the present disclosure. FIG. 14 is a fourthcross-sectional view of the display panel according to the firstembodiment of the present disclosure. FIG. 15 is a fifth cross-sectionalview of the display panel according to the first embodiment of thepresent disclosure.

With reference to the example of FIG. 13, the black matrix layer LBM maycompletely fill the depressions HM, e.g., may have a thicknesscorresponding to the surface of the first protection film layer 127 onthe protrusions PM. Further, the black matrix layer LBM may have athickness corresponding to the surface of the common electrode layer 123of the OLED (not shown). The FIG. 13 example shows a structure in whichthe black matrix layer LBM is higher than the emission layer 122 tofurther improve the capability of blocking light paths or absorbinglight as compared to the structures shown in the examples of FIGS. 7 and8.

With reference to the example of FIG. 14, the black matrix layer LBM maycompletely fill the depressions HM, and may protrude from the surface ofthe first protection film layer 127 on the protrusions PM. The FIG. 14example shows a structure in which the black matrix layer LBM is formedto be higher than the first protection film layer 127 to further improvethe capability of blocking light paths or absorbing moving light ascompared to the structure shown in the example of FIG. 13.

With reference to the example of FIG. 15, the black matrix layer LBM maycompletely fill the depressions HM, and may protrude from the surface ofthe first protection film layer 127 on the protrusions PM, while havinga height corresponding to the surface of the second protection filmlayer 128. The FIG. 15 example shows a structure in which the blackmatrix layer LBM is formed to have a height corresponding to the surfaceof the second protection film layer 128 to further improve thecapability of blocking light paths or absorbing light as compared to thestructure shown in the example of FIG. 14.

As can be seen from the examples of FIGS. 13 to 15, the design of theblack matrix layer LBM may be changed in consideration of the waveguidephenomenon and color mixing caused thereby.

Second Embodiment

FIG. 16 is a first cross-sectional view of a display panel according toa second embodiment of the present disclosure. FIG. 17 is a secondcross-sectional view of the display panel according to the secondembodiment of the present disclosure.

With reference to the examples of FIGS. 16 and 17, the display panelaccording to the second embodiment may include a first substrate 110 a,a transistor array TFTA, OLEDs, a protection film layer ENC, and a colorfilter layer CF. The display panel may include a plurality of subpixels,such as first to third subpixels SP1 to SP3. The first to thirdsubpixels SP1 to SP3 may be defined based on the transistor array TFTAand the OLEDs, and will be described below.

The transistor TFTA may be on the first substrate 110 a. The transistorarray TFTA may include switching transistors, driving transistors,capacitors, and power lines arranged corresponding to the first to thirdsubpixels SP1 to SP3.

The transistor array TFTA may have various configurations, as describedabove with reference to the examples of FIGS. 3A and 3B, and may havevarious lamination structures according to the position of a gateelectrode, such as top-gate and bottom-gate structures, and thus is notdescribed in detail. Components included in the transistor array TFTA,such as switching transistors, driving transistors, and capacitors, maybe protected by an insulating layer or a protection layer.

An insulating layer 118 may be on the transistor array TFTA. Theinsulating layer 118 may be on the protection layer, which may be thehighest layer of the transistor array TFTA. The insulating layer 118 mayinclude a material capable of planarizing the surface, while formingdepressions HM and protrusions PM protruding from depressions HM.Although the depressions HM and the protrusions PM have a rectangularshape in the examples of FIGS. 16 and 17, embodiments are not limitedthereto. The depressions HM and the protrusions PM may be only in thedisplay area on the first substrate 110 a, or may extend to part of anon-display area.

The protrusions PM may respectively define the regions of the first tothird subpixels SP1 to SP3. The protrusions PM of the insulating layer118 may provide regions in which OLEDs may be formed, and may define thepositions of emission regions or openings in which light may be emitted.The depressions HM of the insulating layer 118 may provide regions inwhich the black matrix layer LBM may be formed, and may definenon-emission areas NA in which light may be not emitted.

Each OLED may include a pixel electrode layer 121, an emission layer122, and a common electrode layer 123 in a protrusion PM of theinsulating layer 118. The pixel electrode layer 121 may be selected asan anode (or a cathode), and the common electrode layer 123 may beselected as a cathode (or an anode). The pixel electrode layer 121 maybe connected to the source electrode or the drain electrode of a drivingtransistor included in the transistor array TFTA. The pixel electrodelayer 121 may be isolated to correspond to the protrusion PM. The pixelelectrode layer 121 may be formed in a monolayer structure or amultilayer structure including a reflective electrode layer.

A bank layer 120 may be on the pixel electrode layer 121. The bank layer120 may be over the protrusions PM and the depressions HM. The banklayer 120 on the protrusions PM may have openings that selectivelyexpose the pixel electrode layers 121. The openings of the bank layer120 may serve as openings or emission regions of the subpixels. The banklayer 120 on the depressions HM may cover the surface of the insulatinglayer 118 in the depressions HM, without having openings. The bank layer120 may cover the edge of the pixel electrode layer 121 and thesidewalls of the protrusions PM. The thickness of the bank layer 120 onthe sidewalls of the protrusions PM may decrease with decreasingdistance to the bottom of the protrusions PM. When the bank layer 120formed on the sidewalls of the protrusions PM has this form, thesidewalls of the protrusions PM have a reverse-tapered shape.

The emission layer 122 may be on the exposure pixel electrode layer 121and the depressions HM. The emission layer 122 may include one emissionlayer or at least two emission layers. The emission layer 122 may emitred, green, blue, or white light. However, embodiments are not limitedthereto. The emission layer 122 on the pixel electrode layer 121 may beelectrically isolated from the emission layer 122 on the depressions HM.

The emission layer 122 on the pixel electrode layer 121 may be isolatedfrom the emission layer 122 on the depressions HM according to thestructure and height of the protrusions PM and the depressions HM of theinsulating layer 118. Further, the emission layer 122 on the pixelelectrode layer 121 may be isolated from the emission layer 122 on thedepressions HM according to the reverse-tapered structure of the banklayer 120. That is, the emission layer 122 on the pixel electrode layer121 may be isolated from the emission layer 122 on the depressions HMaccording to one or both of the depressions and the protrusions of theinsulating layer 118 and the reverse-tapered structure of the bank layer120. As a result, the emission layer 122 on the pixel electrode layer121 can emit light, whereas the emission layer 122 on the depressions HMcannot emit light. In addition, the emission layer 122 on the pixelelectrode layer 121 may be isolated from the emission layer 122 on thedepressions HM by controlling the height or tapered structure of thebank layer 120.

An example in which the bank layer 120 is present has been described.However, the bank layer 120 may be omitted, as shown in the example ofFIG. 17. When the bank layer 120 is omitted, the pixel electrode layer121 of each OLED may be formed to correspond to the area of eachprotrusion PM. For example, the emission region of a subpixel may bewidened as compared to a case in which the bank layer 120 may bepresent. When the bank layer 120 is omitted, the insulating layer 118may serve as the bank layer 120. As such, the protrusions PM of theinsulating layer 118 may have a reverse-tapered shape. That is, thelower parts of the protrusions PM may have a narrow width, whereas theupper parts thereof may have a wide width (e.g., the depression may beopposite to the protrusion). According to this structure, the emissionlayer 122 on the pixel electrode layer 121 may be isolated from theemission layer 122 on the depressions HM by the reverse-taperedprotrusions PM.

The common electrode layer 123 may cover the emission layer 122 and thedepressions HM. The common electrode layer 123 may cover the emissionlayers 122 of all subpixels formed on the first substrate 110 a. Thecommon electrode layer 123 may be formed in a monolayer structure or amultilayer structure including a low-resistance layer. The commonelectrode layer 123 may be formed along the topography of theprotrusions PM and the depressions HM, and thus may be formed on theemission layer 122, the sidewalls of the protrusions PM, and the surfaceof the depressions HM, without being cut. Although it may be desirablethat the common electrode layer 123 be formed in the display areawithout being cut to reduce the resistance of the display panel, thecommon electrode layer 123 may include a cut region, e.g., due to thestructure of the depressions HM.

As described above, when the OLEDs are formed on the protrusions PM ofthe insulating layer 118, the emission layer 122 may be isolated persubpixel. Thus, current leakage generated between neighboring subpixelsmay be reduced or prevented.

The protection film layer ENC may be on the common electrode layer 123.Although the protection film layer ENC may be formed in a monolayer ormultilayer structure according to embodiments, an example in which theprotection film layer ENC is formed in a multilayer structure isdescribed below for convenience of explanation. The protection filmlayer ENC may include first to third protection film layers 127, 128,and 129. The first protection film layer 127 may cover the overallsurface of the common electrode layer 123. The first protection filmlayer 127 may be formed along the surface of the common electrode layer123, and thus may have a topography corresponding to the depressions HMand the protrusions PM of the insulating layer 118. The secondprotection film layer 128 may cover the overall surface of the firstprotection film layer 127. The second protection film layer 128 may bethicker than the first and third protection film layers 127 and 129. Thethird protection film layer 129 may cover the overall surface of thesecond protection film layer 128. The first to third protection filmlayers 127 to 129 may have a structure in which an inorganic materialand an organic material may be alternately laminated. For example, oneor more of: In, Si, Zn, W, Mo, and/or Al may be selected as theinorganic material. A monomer or a polymer may be selected as theorganic material. However, embodiments are not limited thereto.

A first black matrix layer LBM may be positioned in the depressions HMof the insulating layer 118. The first black matrix layer LBM mayinclude a material capable of blocking or absorbing light, such as ablack matrix. The first black matrix layer LBM may be positioned on thefirst protection film layer 127 of the protection film layer ENC becausethe first protection film layer 127 may primarily serve to protect theOLEDs positioned thereunder from moisture, oxygen, and the like. Thatis, the first black matrix layer LBM may be on the first protection filmlayer 127 in the depressions HM in consideration of the external airinfiltration prevention capability of the first protection film layer127. However, if the first black matrix layer LBM is not conductive oris capable of absorbing moisture and oxygen, the first black matrixlayer LBM may be on the common electrode layer 123.

In addition, the first black matrix layer LBM may reduce or prevent awaveguide phenomenon in which light moves to neighboring subpixels dueto a refractive index difference between internal layers when theprotection film layer ENC may be used, and may reduce or prevent colormixing due to the waveguide phenomenon when the first black matrix layerLBM is positioned between layers of the protection film layers ENC andhas a height similar to that of the protrusions PM or the commonelectrode layer 123, and thus may block a light path that may cause thewaveguide phenomenon, or may absorb light.

A second black matrix layer UBM may be on the protection film layer ENC.The second black matrix layer UBM may be at a position corresponding tothe first black matrix layer LBM. That is, the second black matrix layerUBM may be in the non-emission areas NA on the first black matrix layerLBM. The second black matrix layer UBM may include a material capable ofblocking or absorbing light, such as a black material.

A color filter layer CF may be on the protection film layer ENC. Thecolor filter layer CF may cover the second black matrix layer UBM, ormay be between the second block matrix layer patterns. The color filterlayer CF may include a red color filter layer CFR, a green color filterlayer CFG, and a blue color filter layer CFB. The red color filter layerCFR, the green color filter layer CFG, and the blue color filter layerCFB may be arranged corresponding to the positions of the first to thirdsubpixels SP1 to SP3. When the color filter layer CF is formed, all theemission layers 122 included in the first to third subpixels SP1 to SP3may emit white light or light of the same color as the color filterlayer CF. For example, the emission layer 122 included in the firstsubpixel SP1 may emit red light, the emission layer 122 included in thesecond subpixel SP2 may emit green light, and the emission layer 122included in the third subpixel SP1 may emit blue light.

FIGS. 18 to 21 are cross-sectional views for describing a method ofmanufacturing the display panel according to the second embodiment ofthe present disclosure.

The method of manufacturing the display panel will be briefly describedbased on the structure illustrated in the example of FIG. 16. Withreference to the examples of FIGS. 18 and 19, subpixel regions in whichthe first to third subpixels SP1 to SP3 may be formed and non-emissionareas NA may be defined on the first substrate 110 a. The transistorarray TFTA may be formed on the first substrate 110 a. The insulatinglayer 118 may be formed on the transistor array TFTA. The insulatinglayer 118 may be formed of an organic material, such as a negativeovercoat, polyimide, a benzocyclobutene series resin, acrylate, and/orphotoacrylate, but embodiments are not limited thereto.

A sacrificial layer 130 may be formed on the insulating layer 118. Thesacrificial layer 130 may be formed to correspond to the subpixelregions of the first to third subpixels SP1 to SP3. The sacrificiallayer 130 may cover the subpixels regions, and may expose thenon-emission areas NA. The insulating layer 118 may be etched using thesacrificial layer 130. Although dry etching may be used as an etchingmethod, embodiments are not limited thereto. When the insulating layer118 is etched using the sacrificial layer 130, protrusions PM anddepressions HM may be formed in the insulating layer 118.

With reference to the examples of FIGS. 20 and 21, the pixel electrodelayer 121 may be formed on the protrusions PM of the insulating layer118. The bank layer 120 may be formed to cover the pixel electrode layer121, the sidewalls of the protrusions PM, and the surface of thedepressions HM. The sidewalls of the protrusions PM have areverse-tapered shape according to the bank layer 120. Accordingly, theupper parts of the depressions HM may be relatively narrow, and thelower parts thereof may be relatively wide. The bank layer 120 may beetched to selectively expose the pixel electrode layer 121. The emissionlayer 122 may be formed on the pixel electrode layer 121 and thedepressions HM. The common electrode layer 123 may be formed to coverthe emission layer 122 and the depressions HM.

The first protection film layer 127 may be formed to cover the commonelectrode layer 123. The first black matrix layer LBM may be formed onthe first protection film layer 127 in the depressions HM. The secondprotection film layer 128 may be formed on the first protection filmlayer 127 and the first black matrix layer LBM. The third protectionfilm layer 129 may be formed on the second protection film layer 128.The second black matrix layer UBM may be formed on the third protectionfilm layer 129. The color filter layer CF may be formed on the thirdprotection film layer 129.

Hereinafter, other examples based on the second embodiment of thepresent disclosure will be described. The following description is basedon differences from the examples of FIGS. 16 and 17.

FIG. 22 is a third cross-sectional view of the display panel accordingto the second embodiment of the present disclosure. FIG. 23 is a fourthcross-sectional view of the display panel according to the secondembodiment of the present disclosure. FIG. 24 is a fifth cross-sectionalview of the display panel according to the second embodiment of thepresent disclosure. FIG. 25 is a sixth cross-sectional view of thedisplay panel according to the second embodiment of the presentdisclosure.

With reference to the example of FIG. 22, the first black matrix layerLBM may completely fill the depressions HM, e.g., may have a thicknesscorresponding to the surface of the first protection film layer 127 onthe protrusions PM. Further, the first black matrix layer LBM may have athickness corresponding to the surface of the common electrode layer 123of the OLED (not shown). The FIG. 22 example shows a structure in whichthe first black matrix layer LBM is higher than the emission layer 122to further improve the capability of blocking light paths or absorbinglight as compared to the structures shown in the examples of FIGS. 16and 17.

With reference to the example of FIG. 23, the first black matrix layerLBM may completely fill the depressions HM, and may protrude from thesurface of the first protection film layer 127 on the protrusions PM.The FIG. 23 example shows a structure in which the first black matrixlayer LBM is higher than the first protection film layer 127 to furtherimprove the capability of blocking light paths or absorbing moving lightas compared to the structure shown in the example of FIG. 22.

With reference to the example of FIG. 24, the first black matrix layerLBM may completely fill the depressions HM, and may protrude from thesurface of the first protection film layer 127 on the protrusions PM,while having a height corresponding to the surface of the secondprotection film layer 128. The FIG. 24 example shows a structure inwhich the first black matrix layer LBM has a height corresponding to thesurface of the second protection film layer 128 to further improve thecapability of blocking light paths or absorbing light as compared to thestructure shown in the example of FIG. 23.

With reference to the example of FIG. 25, when the first black matrixlayer LBM has a height corresponding to the surface of the secondprotection film layer 128, the second black matrix layer UBM may beomitted, for example, because the first black matrix layer LBM can alsoexecute the function of the second black matrix layer UBM, e.g., due tothe thickness thereof.

With reference to the examples of FIGS. 22 to 25, the design of thefirst black matrix layer LBM may be changed in consideration of thewaveguide phenomenon and color mixing caused thereby.

Embodiments of the present disclosure can reduce or prevent currentleakage caused by pixel size decrease and definition increase, thewaveguide phenomenon in which light moves to neighboring subpixels, anda problem of color mixing caused thereby. For example, embodiments ofthe present disclosure may be highly effective in reduction or orprevention of the waveguide phenomenon in which light moves toneighboring subpixels due to a refractive index difference betweeninternal layers when a protection film layer is used, and a problem ofcolor mixing caused by the waveguide phenomenon.

It will be apparent to those skilled in the art that variousmodifications and variations may be made in the present disclosurewithout departing from the technical idea or scope of the disclosure.Thus, it is intended that embodiments of the present disclosure coverthe modifications and variations of the disclosure provided they comewithin the scope of the appended claims and their equivalents.

What is claimed is:
 1. A light-emitting display device, comprising: afirst substrate; an insulating layer on the first substrate, theinsulating layer comprising depressions and protrusions; a plurality oflight-emitting diodes on the protrusions, the light-emitting diodescomprising a pixel electrode layer, an emission layer, a commonelectrode layer, and a black matrix layer in the depressions; and aprotection film layer on the common electrode layer corresponding to thedepressions and the protrusions, the protection film layer comprising atleast one layer; wherein the black matrix layer is on the protectionfilm layer inside the depressions.
 2. The light-emitting display deviceof claim 1, wherein: the protection film layer comprises first to thirdprotection film layers; and the black matrix layer is on the firstprotection film layer inside the depressions.
 3. The light-emittingdisplay device of claim 2, wherein the black matrix layer: has a heightcorresponding to the surface of the protrusions; or is higher than thesurface of the protrusions.
 4. The light-emitting display device ofclaim 2, wherein the height of the black matrix layer corresponds to:the surface of the first protection film layer; or the surface of thesecond protection film layer on the protrusions.
 5. The light-emittingdisplay device of claim 2, wherein at least one of the common electrodelayer and the first protection film layer is formed along the topographyof the protrusions and the depressions.
 6. The light-emitting displaydevice of claim 1, wherein each of the protrusions has a reverse-taperedor rectangular shape.
 7. The light-emitting display device of claim 1,further comprising a bank layer covering an edge of the pixel electrodelayer on the protrusions, sidewalls of the protrusions, and a surface ofthe insulating layer in the depressions.
 8. The light-emitting displaydevice of claim 7, wherein: the bank layer covers the sidewalls of theprotrusions, and becomes thinner with decreasing distance to the bottomof the protrusions; and the sidewalls of the protrusions have areverse-tapered shape according to the bank layer.
 9. The light-emittingdisplay device of claim 8, wherein: the bank layer, the emission layer,and the common electrode layer are in the depressions; and the emissionlayer on the protrusions is isolated from the emission layer on thedepressions.
 10. The light-emitting display device of claim 1, wherein:the protection film layer comprises first to third protection filmlayers; and the black matrix layer comprises: a first black matrix layeron the first protection film layer in the depressions; and a secondblack matrix layer on the third protection film layer.
 11. Thelight-emitting display device of claim 10, wherein the second blackmatrix layer is disposed corresponding to the first black matrix layer.12. The light-emitting display device of claim 10, further comprising acolor filter layer on the third protection film layer.
 13. Thelight-emitting display device of claim 1, wherein each of thelight-emitting diodes is configured to emit at least one of: whitelight, red light, green light, and blue light.
 14. A method ofmanufacturing a light-emitting display device, the method comprising:providing a first substrate; providing an insulating layer on the firstsubstrate, the insulating layer comprising depressions and protrusions;providing a plurality of light-emitting diodes on the protrusions, theproviding the light-emitting diodes comprising a pixel electrode layer,an emission layer, a common electrode layer, and a black matrix layer inthe depressions; and providing a protection film layer on the commonelectrode layer corresponding to the depressions and the protrusions,the protection film layer comprising at least one layer, wherein theblack matrix layer is on the protection film layer inside thedepressions.
 15. The method of claim 14, wherein: the protection filmlayer comprises providing first to third protection film layers; and theblack matrix layer is on the first protection film layer inside thedepressions.
 16. The method of claim 14, wherein each of the protrusionshas a reverse-tapered or rectangular shape.
 17. The method of claim 14,further comprising covering an edge of the pixel electrode layer on theprotrusions, sidewalls of the protrusions, and a surface of theinsulating layer in the depressions with a bank layer.
 18. The method ofclaim 17, wherein: the bank layer covers the sidewalls of theprotrusions, and becomes thinner with decreasing distance to the bottomof the protrusions; and the sidewalls of the protrusions have areverse-tapered shape according to the bank layer.
 19. The method ofclaim 18, wherein: the bank layer, the emission layer, and the commonelectrode layer are in the depressions; and the emission layer on theprotrusions is isolated from the emission layer on the depressions.